Heterostructures overgrown on GaAs corner substrates

By choosing suitable crystal facets we are able to epitaxially overgrow a precleaved corner-substrate. We are using GaAs (1 1 0)-like facets and growth conditions such that no accumulation or depletion of deposited material near the corner is observed, avoiding morphological changes at the corner during the growth process. So we achieve high-quality layer growth across the corner. With this technique we demonstrate a new type of quantum confinement structure consisting of a GaAs/AlGaAs heterostructure overgrown on top of this precleaved corner-substrate.