Title of article :
Structural and optical properties of vertically aligned InP nanowires grown by metal organic vapor phase epitaxy
Author/Authors :
Y Watanabe، نويسنده , , N Yamamoto، نويسنده , , S Bhunia، نويسنده , , T Kawamura، نويسنده , , S Fujikawa، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2004
Abstract :
Vertically aligned InP nanowires were successfully grown by metalorganic vapor phase epitaxy under metal-catalyzed vapor–liquid–solid growth processes. Au nanoparticles with a nominal diameter of View the MathML source were used as the seed to control the diameter of the nanowires. Scanning and transmission electron microscopic studies showed highly dense nanowires with uniform diameters along the length direction, and the zinc-blende structure of the nanowires with 〈111〉 growth direction, respectively. Cathodeluminescence measurements showed a significant blueshift in the spectral peak position compared to bulk InP due to the quantum confinement of the carriers in the nanowires.
Keywords :
TEM , MOVPE , SEM , Photoluminescence , Nanowires , InP , Cathodeluminescence
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Journal title :
Physica E Low-dimensional Systems and Nanostructures