Study of post-growth annealing and Ga coverage effects in low-density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy

We present a detailed analysis of the Ga coverage and of the post-growth annealing effects on the optical properties of very-low-density self-assembled GaAs/AlGaAs quantum dots grown by modified droplet epitaxy. Through theoretical calculation of the QD electronic states, including thermally activated Al–Ga interdiffusion processes, we were able to relate our spectroscopic observations to QD structural properties.