Title of article
Photoluminescence of GeSi/Si(0 0 1) self-assembled islands with dome and hut shape
Author/Authors
Alexey V Novikov، نويسنده , , Mihail V Shaleev، نويسنده , , Dmitry N Lobanov، نويسنده , , Artem N Yablonsky، نويسنده , , Nikolay V Vostokov، نويسنده , , Zaharij F Krasilnik، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2004
Pages
5
From page
416
To page
420
Abstract
The photoluminescence spectra of GeSi/Si (0 0 1) self-assembled islands produced by solid source molecular beam epitaxy in a wide range (460–700°C) of growth temperatures were investigated. The results showed a blue shift of the island-related photoluminescence peak with a growth temperature lowering from 600°C to 550°C. The observed blue shift of the island photoluminescence peak is associated with a sharp decrease in the average height of the island, which occurs through a change of its shape from dome to hut as the growth temperature lowers from 600°C to 550°C.
Keywords
Photoluminescence , Dome-island , Hut-cluster , Self-assembled islands
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2004
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1051405
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