Piezoresistive cantilevers using InAs-based 2D Heterostructures

We measured the magneto-piezoresistance of micromechanical cantilevers fabricated from two-dimensional InAs/AlGaSb heterostructures. The magneto-piezoresistance showed the features of conductance fluctuation and Schbnikov–de Haas oscillation, depending on the sample electron mobility, indicating strong quantum effects on the piezoresistance. A possible mechanism for these quantum effects is discussed based on the comparison between the magneto-piezoresistance and differential magnetoresistance curves.