Title of article :
Antiresonance of electron tunneling through a quantum dot array
Author/Authors :
Yisong Zheng، نويسنده , , Tianquan Lu، نويسنده , , Chengxiang Zhang، نويسنده , , Wenhui Su، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2004
Pages :
7
From page :
290
To page :
296
Abstract :
Electronic transport through a one-dimensional quantum dot array is theoretically studied. In such a system both electron reservoirs of continuum states couple with the individual component quantum dots of the array arbitrarily. When there are some dangling quantum dots in the array outside the dot(s) contacting the leads, the electron tunneling through the quantum dot array is wholly forbidden if the electron energy is just equal to the molecular energy levels of the dangling quantum dots, which is called as antiresonance of electron tunneling. Accordingly, when the chemical potential of the reservoir electrons is aligned with the electron levels of all quantum dots, the linear conductance at zero temperature vanishes if there are odd number dangling quantum dots; Otherwise, it is equal to 2e2/h due to resonant tunneling if the total number of quantum dots in the array is odd. This odd–even parity is independent of the interdot and the lead–dot coupling strength.
Keywords :
Quantum dots , Electronic transport , Antiresonant tunnelling , Conductance
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Serial Year :
2004
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Record number :
1051468
Link To Document :
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