Title of article
Effect of the electron population on intraband absorption in InAs/GaAs self-assembled quantum dots
Author/Authors
E.A Zibik، نويسنده , , A.D. Andreev، نويسنده , , Jayme L.R. Wilson، نويسنده , , M.J. Steer، نويسنده , , R.P. Green، نويسنده , , Alex W.H. Ng، نويسنده , , J.W. Cockburn، نويسنده , , M.S. Skolnick، نويسنده , , M. Hopkinson، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2005
Pages
5
From page
105
To page
109
Abstract
We present a comprehensive study of the intraband transitions in n-type InAs/GaAs quantum dots (QDs) with a filling varying from 0.5 to 4 electrons per dot, using both polarization-dependent absorption and photocurrent spectroscopy. Applying these complementary mid- and far-infrared spectroscopies over a wide energy range allows us to obtain a detailed picture of the intraband transitions and energy levels in self-assembled QDs.
Keywords
Quantum dots , Intersublevel transitions , Mid-IR absorption
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2005
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1051521
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