• Title of article

    Strain distribution and electronic states in stacked InAs/GaAs quantum dots with dot spacing 0

  • Author/Authors

    T. Saito، نويسنده , , T. Nakaoka، نويسنده , , T. Kakitsuka، نويسنده , , Y. Yoshikuni، نويسنده , , Y. Arakawa ، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2005
  • Pages
    5
  • From page
    217
  • To page
    221
  • Abstract
    We have calculated the strain distribution and electronic structures in stacked InAs/GaAs quantum dots (QDs) with the dot spacing 6–View the MathML source. We used the elastic continuum theory for the strain distribution, and the 8-band k·p theory for the electronic structures. For the triply stacked QDs, the light-hole (LH) component of the hole ground state increases with decreasing the dot spacing. The LH component in the columnar QD (dot spacing View the MathML source) reaches 21.1% which is 4.8 times larger than that in the single QD due to the reduction of the biaxial strain. Further increase of the LH component (up to 28.6%) is obtained in the fivefold-stacked columnar QD. This result suggests a possibility of increase in the TM-mode transition in the columnar QDs.
  • Keywords
    Electronic states , Stacked quantum dots , Strain
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Serial Year
    2005
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Record number

    1051544