A theoretical comparison of the 1.3 μm doped InxGa1−xNyAs1−y/GaAs quantum well lasers for different x/y concentrations

A comparative study of the InxGa1-xNyAs1-y/GaAs quantum wells (QWs) for 1.3 μm laser emission with different x/y concentrations, has been undertaken, for the first time, involving gain characteristics with doping. By considering different x/y concentrations, we present the influence of doping on transparency carrier density, gain properties and spontaneous emission factor of 1.3 μm InxGa1-xNyAs1-y/GaAs-strained QWs and compare with an equivalent nitrogen-free 1.3 μm InxGa1-xAs/GaAs laser structure. This study provides useful information for the optimazition of doped InxGa1-xNyAs1-y/GaAs on the basis of 1.3 μm emission wavelength.