Structural evolution of SiNx films deposited by ECR and its light emission

Structural and optical properties of a-SiNx films deposited by electron cyclotron resonance chemical vapor deposition (ECRCVD) have been investigated. The Fourier transform infrared (FTIR) spectroscopy shows the structural evolution of the SiNx films, which are defined as Si-rich SiNx and N-rich SiNx films, also confirmed by Raman spectroscopy. The origin of the light emission for SiNx films may be attributed to two mechanisms, i.e., quantum confinement effect (QCE) and transition of defect energy levels. The correlation between light emission and structures of SiNx films is discussed.