Epitaxial Heusler alloy image films on GaAs(0 0 1) substrates

We present results on fabrication, and structural and electrical properties of single-crystal View the MathML source heterostructures grown by molecular beam epitaxy. The exact stoichiometry of the Heusler alloy films can be achieved for almost lattice matched films. As evidenced by high-resolution X-ray diffraction, transmission electron microscopy, and resistivity measurements, we find an optimum growth temperature of View the MathML source, to obtain ferromagnetic layers with high crystal and interface perfection as well as high degree of atomic ordering. .