Author/Authors :
G. S?k، نويسنده , , C. Hofmann، نويسنده , , J.P. Reithmaier، نويسنده , , A. L?ffler، نويسنده , , S. Reitzenstein، نويسنده , , M. Kamp، نويسنده , , L.V. Keldysh، نويسنده , , V.D. Kulakovskii، نويسنده , , T.L. Reinecke، نويسنده , , A. Forchel، نويسنده ,
Abstract :
We are reporting on investigations in the regime of strong coupling between an atom-like emitter (i.e. a quantum dot exciton) and the electromagnetic field of a single photon in a high finesse cavity. In order to observe strong coupling between a quantum dot exciton and a cavity mode, we grew high quality Bragg reflector AlAs/GaAs planar cavities with a low density In0.3Ga0.6As quantum dot layer by molecular beam epitaxy. Using electron beam lithography and deep plasma etching, micropillars with high Q-factors (about 8000 for View the MathML source diameter) were realized. In microphotoluminescence experiments, the high oscillator strength of the In0.3Ga0.6As quantum dots together with a small mode volume in high finesse micropillar cavities allowed us to observe strong coupling characterized by a vacuum Rabi splitting of View the MathML source. All the conditions necessary to realize such a strongly coupled system and investigate its fundamental properties are discussed in detail.