Title of article :
A monolithically integrated intensity-independent polarization-sensitive switch operating at 1.3 μm based on ordering in InGaAsP
Author/Authors :
Stefan Kr?mer، نويسنده , , Craig S. Neumann، نويسنده , , W. Prost، نويسنده , , F.J. Tegude، نويسنده , , S. Malzer، نويسنده , , G.H. D?hler، نويسنده ,
Issue Information :
ماهنامه با شماره پیاپی سال 2006
Pages :
4
From page :
554
To page :
557
Abstract :
Recently we have shown that the quaternary semiconductor InGaAsP spontaneously forms a mono-atomic superlattice oriented in [1 1 1]B-direction if grown under suitable conditions by MOVPE. The superlattice-induced reduction of the crystal-symmetry leads to a much larger polarisation anisotropy as in ternary III/V-semiconductors, as the ordering affects both the group-III- and the group-V-sub-lattice. In this contribution we report on an optoelectronic switch, based on the absorption anisotropy for [1 1 0]- and [1 1¯ 0]-polarised light. Switching between “on” and “off” depends on the polarisation angle only, but hardly on the intensity.
Keywords :
Polarisation , Switch , Ordering , InGaAsP
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Serial Year :
2006
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Record number :
1051918
Link To Document :
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