Title of article :
Dielectric screening for carbon nanotubes in a gating electric field
Author/Authors :
S.C. Chen، نويسنده , , F.L. Shyu، نويسنده , , C.S. Lue، نويسنده , , M.F. Lin، نويسنده ,
Issue Information :
ماهنامه با شماره پیاپی سال 2006
Pages :
4
From page :
577
To page :
580
Abstract :
We use the sp3 tight-binding model to calculate electronic structures of single-walled carbon nanotubes. All the π and σ electrons would take part in charge screening. As a result of the cylindrical symmetry, the momentum (q) and angular momentum transfer (L) are conserved in the electron–electron Coulomb interactions. The static dielectric function ε (q,L), which determines the charge screening ability, is evaluated from the random-phase approximation. ε of L=1 at long wavelength limit (q→0) is very important in understanding the dielectric screening in the presence of a uniform transverse electric field E⊥. ε (q=0,L=1) hardly depends on the chiral angle, and the dependence on the nanotube radius is weak. It quickly grows as the Fermi level increases, that is, the screening response is largely enhanced by the increasing free carriers.
Keywords :
Dielectric function , Carbon nanotube
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Serial Year :
2006
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Record number :
1051924
Link To Document :
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