Title of article :
Anomalous quantum Hall effect induced by nearby quantum dots
Author/Authors :
K. Takehana، نويسنده , , T. Takamasu، نويسنده , , G. Kido، نويسنده , , M. Henini، نويسنده , , L. Eaves، نويسنده ,
Issue Information :
ماهنامه با شماره پیاپی سال 2006
Abstract :
Transport measurements in high magnetic fields have been performed on two-dimensional electron system (2DES) separated by a thin barrier layer from a layer of InAs self-assembled quantum dots (QDs). Clear feature of quantum Hall effect was observed in spite of presence of QDs nearby 2DES. However, both magnetoresistance, ρxx, and Hall resistance, ρxy, are suppressed significantly only in the magnetic field range of filling factor in 2DES ν<1 and voltage applied on a front gate View the MathML source . The results indicate that the electron state in QDs induces spin-flip process in 2DES.
Keywords :
Quantum Hall effect , Quantum dots
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Journal title :
Physica E Low-dimensional Systems and Nanostructures