Title of article
Quantum Hall ferromagnetism in a two-valley strained Si quantum well
Author/Authors
K. Lai، نويسنده , , W. Pan، نويسنده , , D.C. Tsui، نويسنده , , Dug Man Lee and Kenneth S. Lyon، نويسنده , , M. Mühlberger، نويسنده , , F. Schaffler، نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2006
Pages
3
From page
176
To page
178
Abstract
Tilted field magnetotransport study was performed in a two-valley strained Si quantum well and hysteretic diagonal resistance spikes were observed near the coincidence angles. The spike around filling factor ν=3 develops into a giant feature when it moves to the high-field edge of the quantum Hall (QH) state and quenches for higher tilt angles. When the spike is most prominent, its peak resistance is temperature independent from T∼20 mK up to 0.3 K, which is different from the critical behavior previously reported near the Curie temperature of the QH ferromagnet in AlAs quantum wells. Our data suggest a strong interplay between spins and valleys near the coincidence.
Keywords
Quantum Hall ferromagnetism , Valley degeneracy , Si quantum well
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2006
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1051970
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