Infrared magneto-photoluminescence spectra and electron–hole g-factor of an InAs-inserted channel InGaAs/InAlAs heterostructure

We performed infrared magneto-photoluminescence (PL) spectroscopy on an InAs-inserted-channel InGaAs/InAlAs heterostructure. Series of Landau levels were clearly observed in the infrared PL spectra. From the energy separation between σ+ and σ− components of PL, the electron–hole g-factor in each Landau level were determined. We discuss the obtained Landau fan-diagram from the points that nonparabolicity of conduction band structure and penetration of electron wavefunction into InGaAs layer.