Author/Authors :
Tianhe Li، نويسنده , , Qi Wang، نويسنده , , Xin Guo، نويسنده , , Zhigang Jia a، نويسنده , , Pengyu Wang، نويسنده , , Xiaomin Ren، نويسنده , , Yongqing Huang، نويسنده , , Shiwei Cai، نويسنده ,
Abstract :
The density property of InAs/GaAs quantum dots (QDs) grown by metal-organic chemical vapor deposition (MOCVD) was investigated in detail. The saturation density of InAs/GaAs QDs was experimentally demonstrated. The InAs deposition thickness (InAs coverage) when the saturation density reached was also found. Furthermore, we systemically analyzed the influences of growth temperature and growth rate of InAs/GaAs QDs on the saturation density. Finally, BInAs/GaAs QDs with room-temperature photoluminescence (RT-PL) wavelength of 1320 nm and full width at half maximum (FWHM) of 40 mev were achieved for the first time, and the effects of boron incorporation on InAs/GaAs QDs were studied.
