Three dimensional simulator of the single electron transistor based on ISIS structure

In the paper a simulator of the single electron transistor (SET) is presented. This is a computer program based on the three dimensional (3D) model of the structure called ISIS (Inverted Semiconductor Insulator Semiconductor). For numerical realization of the model the hybrid boundary and finite difference elements method (BEM-FDM) is used. Therefore the three dimensional simulations of SET can be effectively realized on standard PC. In this paper methods for computing basic parameters of SET are described. These are: 3D Poisson equation solution method, Greenʹs function method and Landauer-Büttiker formalism. The results of SET simulations are presented in the form of potential distributions, quantum conductance and current-voltage characteristic.