A computational study of ballistic graphene nanoribbon field effect transistors

A self-consistent solution of Schrödinger equation based on Greenʹs function formalism coupled to a two-dimensional Poissonʹs equation for treating the electrostatics of the device is used to simulate and model the ballistic performance of an armchair edged GNRFET. Our results take into account interactions of third nearest neighbors, as well as relaxation of carbon–carbon bonds in the edges of nanoribbons. Performance of the I–V characteristics of GNRFETs for different widths and lengths is studied in terms of their subthreshold swing, saturation behavior, leakage current and on-current density. This can help in optimizing the fabricated GNRFET devices in terms of their geometrical dimensions as well as their supply voltage and bias point for optimum attainable performance. The impact of channel regionʹs coupling to the source/drain leads is also studied in the last Section of our work.