Title of article
Void-induced thermal impedance in power semiconductor modules: some transient temperature effects
Author/Authors
J.D.، van Wyk, نويسنده , , D.C.، Katsis, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
8
From page
1239
To page
1246
Abstract
The operation of power semiconductor modules creates thermal stresses that grow voids in the solder die-attach layer. These voids reduce the ability of the die-attach solder layer to conduct heat from the silicon junction to the heat spreader. This results in increased thermal impedance. The effect of accelerated aging on solder bond voiding and on thermal transient behavior is investigated. Commercially packaged TO-247 style MOSFETs are power cycled, imaged, and thermally analyzed to generate a correlation between void percentage and thermal impedance.
Keywords
Distributed systems
Journal title
IEEE Transactions on Industry Applications
Serial Year
2003
Journal title
IEEE Transactions on Industry Applications
Record number
105730
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