• Title of article

    Void-induced thermal impedance in power semiconductor modules: some transient temperature effects

  • Author/Authors

    J.D.، van Wyk, نويسنده , , D.C.، Katsis, نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2003
  • Pages
    8
  • From page
    1239
  • To page
    1246
  • Abstract
    The operation of power semiconductor modules creates thermal stresses that grow voids in the solder die-attach layer. These voids reduce the ability of the die-attach solder layer to conduct heat from the silicon junction to the heat spreader. This results in increased thermal impedance. The effect of accelerated aging on solder bond voiding and on thermal transient behavior is investigated. Commercially packaged TO-247 style MOSFETs are power cycled, imaged, and thermally analyzed to generate a correlation between void percentage and thermal impedance.
  • Keywords
    Distributed systems
  • Journal title
    IEEE Transactions on Industry Applications
  • Serial Year
    2003
  • Journal title
    IEEE Transactions on Industry Applications
  • Record number

    105730