Charge transfer dynamics of electrochemical dark and photoprocesses on semiconductors Part II: Fermi energy characteristics and photoadmittance functions Original Research Article

Relevant cases of photoadmittance functions of two-step hydrogen reactions on n-semiconductors are treated, following corresponding stationarity conditions considered in Part I. As a major result, the evolution of photoadmittance structures from dark-admittance occurring in the cathodic regime of hydrogen reaction is explained on a coherent dynamical level. Further, stationary Fermi energies and photoadmittance functions are calculated for coupled balances, taking into account the kinetics of n-semiconductor dissolution together with parallel hydrogen reaction channels. Experimental comparisons have been made on n-GaAs.