Application of glycine containing solutions for electroless deposition of Co–P and Co–W–P films and their behavior as barrier layers

Co–P and Co–W–P alloy films were deposited by the electroless plating method on Cu foil or on Cu deposited by sputtering on a Ta/SiO2/Si/substrate. Dicarboxylic acids, used as buffering additives, increase the deposition rate and P quantity in the films. The cobalt deposition rate and P quantity in the films decrease with incorporation of tungsten into the films. AFM, XRD and XPS data indicate the differences between the structure of Co–P and Co–W–P films and confirm that Co–W–P films deposited from glycine containing solutions can serve as a perfect diffusion barrier layer to prevent Cu diffusion.