• Title of article

    LDA + U and GGA + U studies of Al-rich and bulk goethite (α-FeOOH)

  • Author/Authors

    Silvia A. Fuente، نويسنده , , Patricia G. Belelli، نويسنده , , Norberto J. Castellani، نويسنده , , Marcelo Avena، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2013
  • Pages
    9
  • From page
    1012
  • To page
    1020
  • Abstract
    The electronic and structural properties of bulk goethite and Al-rich goethite were studied on the basis of spin-polarized DFT at the LDA + U and GGA(PW91) + U levels. Firstly, the periodic model of bulk goethite was optimized varying the value of Ueff. Considering all the results obtained we can conclude that the bulk goethite described at the GGA + U level with Ueff = 6 eV gives us the better agreement with different physical properties. The results of magnetic moments of Fe ions, the DOS analysis and the Bader atomic charges identify goethite as an antiferromagnetic Fe(III) compound. For Al-rich goethite the GGA + U (Ueff = 6 eV) approach was used. The isomorphous substitution of one Fe ion with Al ion produces the reduction of the cell parameters with respect to the bulk goethite. Regarding the magnetic ordering, it was observed that Fe atoms surrounding the Al atom must have the same spin projection, i.e., spin-up or -down. The charge density was changed with the addition of Al ion, producing a depletion where the ion is located and some electron redistribution in the zone of the oxygen atoms surrounding the Al ion. This behavior produces some small magnetization in these O ions.
  • Keywords
    Oxides , Ab initio calculations , Electronic structure , Magnetic structures
  • Journal title
    Materials Chemistry and Physics
  • Serial Year
    2013
  • Journal title
    Materials Chemistry and Physics
  • Record number

    1059791