Title of article :
Crystal growth and characterization of Ho-doped Lu3Ga5O12 for 2 μm laser
Author/Authors :
G.H. Sun، نويسنده , , Q.L. Zhang، نويسنده , , H.J. Yang، نويسنده , , J.Q. Luo، نويسنده , , D.L. Sun، نويسنده , , C.J. Gu، نويسنده , , S.T. Yin، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2013
Pages :
5
From page :
162
To page :
166
Abstract :
Ho:LuGG single crystal was successfully grown by the Czochralski growth method, and its lattice parameter was found to be 12.2371 Å. Its thermal conductivity was measured to be 5.29 W mK−1 at 300 K. Meanwhile, transmission spectra were recorded at room temperature, and then its absorption spectra were obtained combining with the transmission spectra of LuGG crystal. The transition intensity parameters Ωt (t = 2, 4, 6), the oscillator strengths, fluorescence branching ratios, transition probabilities and the lifetimes of Ho3+ in LuGG crystal were all evaluated by the Judd–Ofelt theory. Furthermore, its emission spectra were also determined and analyzed.
Keywords :
Crystal growth , Thermal conductivity , Optical materials , Luminescence , Optical properties , Powder diffraction
Journal title :
Materials Chemistry and Physics
Serial Year :
2013
Journal title :
Materials Chemistry and Physics
Record number :
1059820
Link To Document :
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