Title of article :
Electrical and dielectric properties of sol–gel derived mullite doped with transition metals
Author/Authors :
Debasis Roy، نويسنده , , Biswajoy Bagchi، نويسنده , , Sukhen Das، نويسنده , , Papiya Nandy، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2013
Abstract :
Highly crystallized mullite composite has been synthesized at 1000 °C and 1300 °C via sol–gel technique in the presence of transition metal ions such as cobalt, nickel and copper. The dielectric properties (dielectric constant, loss tangent and a.c. conductivity) of the composites have been measured at room temperature and their variation with increasing frequency and concentration of the doped metals has been investigated. The composite doped with nickel exhibits minimum dielectric constant of 3.15 at 0.002(M) concentration at a frequency of 1.5 MHz. Experimental data shows a linear increase in a.c. conductivity with increasing concentration of metal doping ions .The dielectric constant and loss tangent of the composites are within the range of requirements for commercial use in electronics.
Keywords :
Nanostructures , Sol–gel growth , Grazing incidence X-ray diffraction , Dielectric properties , Electron microscopy (SEM)
Journal title :
Materials Chemistry and Physics
Journal title :
Materials Chemistry and Physics