• Title of article

    Electrical and dielectric properties of sol–gel derived mullite doped with transition metals

  • Author/Authors

    Debasis Roy، نويسنده , , Biswajoy Bagchi، نويسنده , , Sukhen Das، نويسنده , , Papiya Nandy، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2013
  • Pages
    9
  • From page
    375
  • To page
    383
  • Abstract
    Highly crystallized mullite composite has been synthesized at 1000 °C and 1300 °C via sol–gel technique in the presence of transition metal ions such as cobalt, nickel and copper. The dielectric properties (dielectric constant, loss tangent and a.c. conductivity) of the composites have been measured at room temperature and their variation with increasing frequency and concentration of the doped metals has been investigated. The composite doped with nickel exhibits minimum dielectric constant of 3.15 at 0.002(M) concentration at a frequency of 1.5 MHz. Experimental data shows a linear increase in a.c. conductivity with increasing concentration of metal doping ions .The dielectric constant and loss tangent of the composites are within the range of requirements for commercial use in electronics.
  • Keywords
    Nanostructures , Sol–gel growth , Grazing incidence X-ray diffraction , Dielectric properties , Electron microscopy (SEM)
  • Journal title
    Materials Chemistry and Physics
  • Serial Year
    2013
  • Journal title
    Materials Chemistry and Physics
  • Record number

    1059849