Title of article :
Growth process analysis of a-Si1−xNx:H films probed by X-ray reflectivity
Author/Authors :
E Bontempi، نويسنده , , L.E. Depero، نويسنده , , L Sangaletti، نويسنده , , F Giorgis، نويسنده , , C.F. Pirri، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2000
Abstract :
Amorphous silicon–nitrogen (a-Si1−xNx:H) alloys deposited by ultra high vacuum plasma-enhanced chemical vapor deposition (PECVD) have been characterized by X-ray reflectivity (XRR) measurements in order to investigate their structural properties. From the analysis of XRR data, the thickness, density, interface and surface roughness of the films have been evaluated.
Keywords :
X-ray reflectivity (XRR) , Plasma-enhanced chemical vapor deposition (PECVD) , Silicon nitride , Alloys , Light-emitting devices (LED)
Journal title :
Materials Chemistry and Physics
Journal title :
Materials Chemistry and Physics
