Title of article
Growth process analysis of a-Si1−xNx:H films probed by X-ray reflectivity
Author/Authors
E Bontempi، نويسنده , , L.E. Depero، نويسنده , , L Sangaletti، نويسنده , , F Giorgis، نويسنده , , C.F. Pirri، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2000
Pages
5
From page
172
To page
176
Abstract
Amorphous silicon–nitrogen (a-Si1−xNx:H) alloys deposited by ultra high vacuum plasma-enhanced chemical vapor deposition (PECVD) have been characterized by X-ray reflectivity (XRR) measurements in order to investigate their structural properties. From the analysis of XRR data, the thickness, density, interface and surface roughness of the films have been evaluated.
Keywords
X-ray reflectivity (XRR) , Plasma-enhanced chemical vapor deposition (PECVD) , Silicon nitride , Alloys , Light-emitting devices (LED)
Journal title
Materials Chemistry and Physics
Serial Year
2000
Journal title
Materials Chemistry and Physics
Record number
1060366
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