Title of article :
Liquid-phase epitaxy of solid solutions (Ge2)1−x(ZnSe)x
Author/Authors :
A.S. Saidov، نويسنده , , A.Sh. Razzakov، نويسنده , , V.A. Risaeva، نويسنده , , E.A. Koschanov، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2001
Abstract :
Epitaxial layers of (Ge2)1−x(ZnSe)x solid solutions from solution-melt, limited by horizontal GaAs and Ge substrates have been grown. The dependence of lattice perfection on growth conditions is shown. X-ray fluorescence spectrum, diffraction pattern and scanning picture, photoluminescence the dependence of Hall mobility from temperature and current–voltage (I–V) characteristics of the structures are studied.
Keywords :
Liquid-phase epitaxy , (Ge2)1?x(ZnSe)x , Solution-melt
Journal title :
Materials Chemistry and Physics
Journal title :
Materials Chemistry and Physics
