Effects of additives on microstructures and microwave dielectric properties of (Zr, Sn)TiO4 ceramics

The effects of CuO, Bi2O3 and V2O5 additives (up to 3 wt.%) on the microstructures and the microwave dielectric properties of (Zr0.8Sn0.2)TiO4 ceramics are investigated. The sintering temperature of (Zr0.8Sn0.2)TiO4 ceramics with CuO, Bi2O3 and V2O5 additions can be effectively reduced from 1400 to 1300°C due to the liquid phase effects. The grain grows at lower sintering temperatures (1300°C) to 4.5–5.4 μm with CuO, Bi2O3 or V2O5 additions. The dielectric constants (εr) are not significantly affected by various additives and ranged in 36–38. Small values (<±3 ppm °C−1) of the temperature coefficient of resonant frequency (τf) are obtained for (Zr0.8Sn0.2)TiO4 ceramics with additives. However, the unloaded quality factors Q×f are strongly dependent upon the type and the amount of additives.