Photoelectrochemical investigation of Ag2S thin films deposited by SILAR method

Nanocrystalline thin films of Ag2S have deposited onto fluorine doped tin oxide (FTO) coated glass substrates at the optimised conditions by using successive ionic layer adsorption and reaction (SILAR) method. Photoelectrochemical (PEC) investigations were carried out using cell configuration as n-Ag2S/(1 M NaOH+1 M Na2S+1 M S)/C. The dynamic current–voltage characteristic has been examined at room temperature (27°C). It is concluded that the Ag2S films are of n-type electrical conductivity. The photovoltaic output characteristics were used to calculate fill factor (FF) and solar conversion efficiency (η). The low value of η may be due to high value of series resistance and nanocrystalline grain size of Ag2S thin films.