Title of article :
Diamond nucleation on Cu by using MPCVD with a biasing pretreatment
Author/Authors :
Kun-Lin Chuang، نويسنده , , Li Chang، نويسنده , , Chun-An Lu، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2001
Pages :
5
From page :
176
To page :
180
Abstract :
Bias enhanced nucleation of diamond on polycrystalline Cu substrates has been investigated. With CH4 concentration increased, the nucleation density is increased and saturated at 10% CH4, but the quality of diamond is decreased. Bias voltages also play an important role on the nucleation of diamond. It is found that the nucleation density is highest when the voltage was set at −250 V.
Keywords :
Nucleation , Plasma , Chemical vapor deposition
Journal title :
Materials Chemistry and Physics
Serial Year :
2001
Journal title :
Materials Chemistry and Physics
Record number :
1060668
Link To Document :
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