Title of article
Diamond nucleation on Cu by using MPCVD with a biasing pretreatment
Author/Authors
Kun-Lin Chuang، نويسنده , , Li Chang، نويسنده , , Chun-An Lu، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2001
Pages
5
From page
176
To page
180
Abstract
Bias enhanced nucleation of diamond on polycrystalline Cu substrates has been investigated. With CH4 concentration increased, the nucleation density is increased and saturated at 10% CH4, but the quality of diamond is decreased. Bias voltages also play an important role on the nucleation of diamond. It is found that the nucleation density is highest when the voltage was set at −250 V.
Keywords
Nucleation , Plasma , Chemical vapor deposition
Journal title
Materials Chemistry and Physics
Serial Year
2001
Journal title
Materials Chemistry and Physics
Record number
1060668
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