Title of article
Optical characteristics of sputtered tantalum oxynitride Ta(N,O) films
Author/Authors
Chao-An Jong، نويسنده , , Tsung-Shune Chin، نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2002
Pages
9
From page
201
To page
209
Abstract
Tantalum oxynitride films, Ta(N,O), were prepared by reactive RF magnetron sputtering. Investigation was made on optical properties of films deposited at various sputtering parameters such as RF power, substrate temperature and sputtering gas ratios: N2/O2 flow ratio and Ar fraction (Ar/(Ar+N2+O2)). The deposition rates vary from 1.9 to 5.8 nm min−1 and 5.5 to 11.8 nm min−1, respectively, as the Ar fraction increases from 0.5 to 0.91 and N2/O2 flow ratio from 0.25 to 4, respectively. The deposition rates are proportional to the substrate temperature and the RF power from 1.2 to 5.5 nm min−1, too. By using the SEM and SPM analyses, the Ta(N,O) film not only shows a columnar structure but also has a smooth surface with a RMS roughness 0.22 nm for a film as-deposited at 300 °C. The roughness increases to 7.0 nm after annealing at 800 °C for 1 h. The microstructure of Ta(N,O) films closely relates to the introduced N2/O2 flow ratios, and shows significant effects on optical properties. By TEM microstructure analysis, a fine structure, in which nano-particles embedded in an amorphous matrix, was shown. The refractive index (n) decreases from 2.29 to 1.95 in the visible wavelength region when the N2/O2 flow ratio changes from 4 to 1. Furthermore, the refractive index is inversely proportional to the substrate temperature and proportional to the RF power. The reflectance (0.01–0.25) and the transmittance (0.73–0.9) change with sputtering parameters.
Keywords
Tantalum oxynitride films , Refractive index , Binding energy , Reflectance , Transmittance , Deposition rate , Roughness
Journal title
Materials Chemistry and Physics
Serial Year
2002
Journal title
Materials Chemistry and Physics
Record number
1060797
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