Synthesis of wurtzite GaN films by reactive hot wall vapour deposition technique: fabrication of Au/GaN Schottky diode

Wurtzite GaN films were synthesised on p-Si(1 0 0) and n-Si(1 0 0) substrates by plasma assisted hot wall vapour deposition technique without using any buffer layer. The films were characterised by electrical and optical measurements while the microstructural information was obtained from atomic force microscopy (AFM) and X-ray diffraction (XRD) studies. The compositional study for the GaN film was carried out using SIMS. Photoluminescence (PL) measurement at room temperature exhibited near band edge (BE) emission at ∼363 nm (3.4 eV) along with a broad yellow band. The bonding environment in the film was revealed from FTIR studies. Schottky diode (Au/GaN), fabricated with hexagonal GaN film on n-Si substrate, was characterised by I–V and C–V analysis.