• Title of article

    Reaction-bonded silicon carbide refractories

  • Author/Authors

    N. Kishan Reddy، نويسنده ,

  • Issue Information
    ماهنامه با شماره پیاپی سال 2002
  • Pages
    4
  • From page
    78
  • To page
    81
  • Abstract
    Silicon nitride-bonded silicon carbide (SNBSC) and aluminosilicate-bonded silicon carbide (ASBSC) refractories have been prepared by reaction bonding. The percentage of silicon nitride or aluminosilicate in the refractory was varied from 15 to 25 wt.%. The modulus of rupture of the refractories increases with molybdenum disilicide (MoSi2) infiltration. These are resistant to molten zinc, lead, and aluminium, but are attacked by molten sodium sulphate. The thermal expansion coefficient of silicon carbide refractories varies from 3.1×10−6 to 5.3×10−6 °C−1 for the temperature from room temperature to 1000 °C.
  • Keywords
    Silicon carbide refractories , Reaction bonding , Modulus of rupture
  • Journal title
    Materials Chemistry and Physics
  • Serial Year
    2002
  • Journal title
    Materials Chemistry and Physics
  • Record number

    1060890