Title of article :
Frequency response of ZnO-doped BaZrxTi1−xO3 ceramics
Author/Authors :
YONGLI WANG، نويسنده , , LONGTU LI، نويسنده , , Jianquan Qi، نويسنده , , ZHILUN GUI، نويسنده ,
Issue Information :
ماهنامه با شماره پیاپی سال 2002
Pages :
5
From page :
250
To page :
254
Abstract :
Electrical properties and relaxation characteristics for undoped and ZnO-doped BaZrxTi1−xO3 have been studied via complex impedance measurements. The results suggest that at the grain interior Zn2+ substitutes Ti4+ and serves as an acceptor dopant. STEM and EDX analysis confirm the expected presence of Zn and Ti rich phase at the triangle phase boundaries, but find few signals for zinc at the grain core. More insightful studies are needed in order to clarify this point.
Keywords :
Complex impedance , Arrhenius plot , Dipole polarization , relaxation , Oxygen vacancy
Journal title :
Materials Chemistry and Physics
Serial Year :
2002
Journal title :
Materials Chemistry and Physics
Record number :
1060916
Link To Document :
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