Electrosynthesis and characterisation of n-WSe2 thin films

Tungsten diselenide (WSe2) semiconductor thin films were electrodeposited by the galvanostatic route. Polycrystalline n-WSe2 thin films were deposited on transparent conducting oxide (TCO) coated glass substrates. The variation of growth rate with temperature has been studied. Both the as-deposited and annealed films showed hexagonal structure. The optical absorption studies showed a direct band gap nature of the WSe2 films. The composition of the film was found by EDAX analysis. The surface morphology of the films were studied by scanning electron microscopy. The type of the semiconductor was found from the Mott–Schottky plot as n-type and confirmed by hot probe technique. The semiconductor parameters like acceptor density and flatband potential were reported from the study of Mott–Schottky plots.