Electrical properties of GaAs metal-oxide-semiconductor structures with the oxide layer grown by liquid phase chemical-enhanced method

The oxide films prepared by liquid phase chemical-enhanced technique were electrically characterized using current–voltage and capacitance–voltage measurements on metal-oxide-semiconductor (MOS) structure. It was found that the leakage current density is roughly (1–2)×10−6 A cm−2 at the electric filed of 1 MV cm−1. The oxides with denser structures exhibit higher refractive indices, higher reliability and also higher breakdown voltages. The breakdown fields of ∼7 MV cm−1 were obtained as refractive index is ∼2.12. In addition, dielectric constant of oxide films is found to increase with increasing thickness and varies within a wide range from 3.2 to 11 under accumulation region. Furthermore, short time ramp-voltage, constant-voltage and constant-current stress are employed to reliability study.