Title of article :
Piezoelectric thin AlN films for bulk acoustic wave (BAW) resonators
Author/Authors :
H.P Loebl، نويسنده , , M Klee، نويسنده , , C Metzmacher، نويسنده , , W Brand، نويسنده , , R Milsom، نويسنده , , P Lok، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2003
Abstract :
Thin film bulk acoustic wave (BAW) resonators and filters are well suited for mobile communication systems operating at high frequencies between 0.5 and 10 GHz. Piezoelectric thin film materials investigated for BAW devices within Philips include AlN thin films. The relationship between sputter deposition conditions, AlN film structure, electromechanical coupling factor kt, and relevant electrical parameters of BAW devices are discussed.
Keywords :
AlN , Bulk acoustic wave , Resonator
Journal title :
Materials Chemistry and Physics
Journal title :
Materials Chemistry and Physics
