Effect of PMN addition on dielectric properties of PZT thin films synthesized by modified chemical solution process

Pb(ZrxTi1−x)O3 (0.3≤x≤0.6) thin films modified by 10 mol% Pb(Mg1/3Nb2/3)O3 (PMN) have been prepared by chemical solution deposition with corresponding metal alkoxides. The films were nearly pure perovskite phase with preferentially (1 1 1)-orientation. The microstructure was dense and uniform while grain size became smaller from ∼250 to ∼100 nm with increasing Zr concentration (x). Dielectric constant and remnant polarization (Pr) showed maximum values at the composition of x=0.5 and were ∼1500 and ∼18 μC cm−2, respectively. Also, it was found that the degrading tendency of remnant polarization of lead zirconate–titanate (PZT) film with test cycling was apparently suppressed due to the presence of PMN.