• Title of article

    Full spectrum dielectric response of Bi2(Zn1/3Nb2/3)O7 thin films in terahertz, infrared and optical frequency regions

  • Author/Authors

    Hsiu-Fung Cheng، نويسنده , , Yi-Chun Chen، نويسنده , , Hsiang-Lin Liu، نويسنده , , Luu-Gen Hwa، نويسنده , , Petr Ku?el، نويسنده , , Jan Petzelt، نويسنده , , I-Nan Lin، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2003
  • Pages
    3
  • From page
    161
  • To page
    163
  • Abstract
    Dielectric response of Bi2(Zn1/3Nb2/3)2O7, BiZN, thin films was characterized by terahertz (THz), Fourier transform infrared (FTIR) and optical spectroscopies. FTIR measurements reveal the presence of lattice vibrational modes at f1=330 cm−1 and f2=526 cm−1. Real part of dielectric constant (ε1≅21.5 at f=200 cm−1) for the BiZN thin films increases moderately with frequency and drops abruptly at the polarizational resonances corresponding to f1 and f2, approaching a low constant value (ε1≅2.4–3.6) in high frequency regime (f>700 cm−1) High frequency response of BiZN thin films is essentially the same as the dielectric properties measured in optical frequency regime, indicating that there is no lattice vibrational mode beyond 700 cm−1. The dielectric properties of the films in f>700 cm−1 regime is presumably contributed by electronic polarization only. In contrast, the low frequency dielectric constant (ε1=21.5) is still smaller than the ε1-value measured by THz-spectroscopic technique (ε1)THz=30–38. Such phenomenon infers that there exists additional lattice vibrational mode in between 0.8 and 6 THz (200 cm−1) frequency regime.
  • Keywords
    Thin films , Microwave dielectric , Optical properties
  • Journal title
    Materials Chemistry and Physics
  • Serial Year
    2003
  • Journal title
    Materials Chemistry and Physics
  • Record number

    1061232