Title of article :
Controlled solvothermal synthesis of β-Ga2O3 3D microstructures and their optical properties
Author/Authors :
Godhuli Sinha، نويسنده , , Subhadra Chaudhuri *، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2009
Pages :
6
From page :
644
To page :
649
Abstract :
β-Ga2O3 3D microstructures were prepared by ethylenediamine (En)-mediated solvothermal technique at low temperature (200 °C). These microstructures were characterized by X-ray diffraction, scanning electron microscopy and field emission scanning electron microscopy. The optical absorbance and photoluminescence spectroscopic studies of these microstructures indicated that the optical property of the microstructures were synthesis parameter dependent. The volume ratio of En to water played a crucial role in the conversion of initial α-GaO(OH) nanowires into β-Ga2O3 nanoflakes and finally to 3D microstructures. Photoluminescence spectra of the samples revealed gallium–oxygen vacancy-related defects in these nano- and microstructures. A plausible growth mechanism for the variation of morphology with synthesis parameter is discussed.
Keywords :
Semiconductors , Oxides , electron microscopy , crystal structure
Journal title :
Materials Chemistry and Physics
Serial Year :
2009
Journal title :
Materials Chemistry and Physics
Record number :
1061511
Link To Document :
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