Title of article
Transmission electron microscopy study of Au/ZrB2/Ag(Te) contacts to GaSb
Author/Authors
J. Ka?tcki، نويسنده , , A. ?aszcz، نويسنده , , J. Ratajczak، نويسنده , , F. Phillipp، نويسنده , , M. Guziewicz، نويسنده , , A. Piotrowska، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2003
Pages
5
From page
260
To page
264
Abstract
By means of cross-sectional transmission electron microscopy (TEM) the influence of the annealing temperature on the morphology of Au/ZrB2/Ag(Te) ohmic contacts to (1 0 0)-oriented tellurium-doped GaSb substrates has been investigated. Both the shape and the size of the Ag(Te) grains significantly varied with the annealing temperature. In the sample annealed at 250 °C, below the Ag(Te)/GaSb interface, dissolution pits (DPs) were formed. At the higher annealing temperatures the DP’s were not found. After annealing at 300 °C, changes in the Ag(Te) grains located close to the interface can be seen. These changes were not observed in the sample annealed at 350 °C. In all samples the annealing caused the formation of microtwins.
Keywords
TEM , Semiconductors , Interfaces , Thin films , Annealing , Ohmic contacts
Journal title
Materials Chemistry and Physics
Serial Year
2003
Journal title
Materials Chemistry and Physics
Record number
1061574
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