Title of article
Growth and characterization of WS2 thin films deposited by dip method
Author/Authors
P.P. Hankare، نويسنده , , P.A. Chate، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2009
Pages
3
From page
347
To page
349
Abstract
Tungsten disulphide has been grown by dip technique on glass substrate using sodium tungstate and thiourea as sources of tungsten and sulphide ion respectively. X-ray diffraction of as deposited thin film indicated polycrystalline character with rhombohedral phase. Optical study shows a direct band gap nature with band gap energy 1.4 eV. Conductivity measurement showed a semiconductor-type temperature dependence characterized by activation energy 0.659 eV.
Keywords
Thin films , Crystal growth , Semiconductor , Chemical synthesis , Electrical properties
Journal title
Materials Chemistry and Physics
Serial Year
2009
Journal title
Materials Chemistry and Physics
Record number
1061851
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