Growth and characterization of WS2 thin films deposited by dip method

Tungsten disulphide has been grown by dip technique on glass substrate using sodium tungstate and thiourea as sources of tungsten and sulphide ion respectively. X-ray diffraction of as deposited thin film indicated polycrystalline character with rhombohedral phase. Optical study shows a direct band gap nature with band gap energy 1.4 eV. Conductivity measurement showed a semiconductor-type temperature dependence characterized by activation energy 0.659 eV.