Microcrystalline GaN film grown on Si(1 0 0) and its application to MSM photodiode

The properties and application of gallium nitride (GaN) films grown on silicon at a low temperature (873 K) by electron cyclotron resonance (ECR) plasma-assisted metalorganic chemical vapor deposition (MOCVD) were investigated. Structural analysis revealed microcrystalline structure (μc-GaN) with crystallite size of 167 nm for these smooth and transparent films. Ni/μc-GaN metal-semiconductor-metal (MSM) photodiode have been fabricated and analyzed by means of electrical characterization, using current–voltage (I–V) and capacitance–voltage (C–V) measurements to evaluate the Schottky contact parameters for the study of current transport mechanism of the MSM photodiode. The barrier height φb determined from the C–V method is 0.734 eV.