Title of article :
Dielectric relaxation in Ge1−xSe2Pbx (x=0, 0.2 and 0.6) nano-crystalline system
Author/Authors :
K Sedeek، نويسنده , , A Adam، نويسنده , , L.A Wahab، نويسنده , , F.M Hafez، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2004
Abstract :
Measurements of the ac conductivity and the dielectric loss of Pb modified Ge1−xSe2Pbx disordered system (x=0, 0.2 and 0.6) have been carried out in the frequency range 100 Hz–20 kHz and at temperature from 303 to 433 K. The virgin and the x=0.2 samples data shows a normal behavior according to the relation σac(ω)=AωS. However, the x=0.6 sample behaves differently. The exponent(s) measured for the two modified samples shows sub-linear relation depending on the temperature of measurements. The experimental results of the highly modified sample are interpreted in terms of the coexistence of two parallel conduction mechanisms; the predominance of each depends on both temperature and frequency.
Keywords :
Dielectric relaxation , Nanocrystalline , Chalcogenide
Journal title :
Materials Chemistry and Physics
Journal title :
Materials Chemistry and Physics