Effect of the deposition conditions on the morphology and bonding structure of SiCN films

Silicon carbon nitride (SiCN) films were synthesized on Si wafer by microwave plasma chemical vapor deposition with CH4, N2 and additional Si column as sources. The effect of N2 flow rate and substrate temperature on the morphology and bonding structure of the samples was examined. Field emission scanning electron microscopy shows that crystals with perfect facets can be achieved at modest N2 flow rate. A higher substrate temperature facilitates crystallization and larger crystalline size. X-ray photo-emission spectroscopy suggests that the bonding structure and composition of the films can be manipulated through varying the flow rate N2. The influence of introducing H2 on the films was also studied.