Title of article
WO3-based capacitor–varistor doped with Gd2O3
Author/Authors
X.S Yang، نويسنده , , Y Wang، نويسنده , , L Dong، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2004
Pages
5
From page
253
To page
257
Abstract
WO3-based varistors doped with Gd2O3 were prepared and the microstructures, the nonlinear electrical properties and the dielectric properties were investigated. There is only monoclinic phase of WO3 existing in the doped samples. The electrical properties were stable, either under high electrical field or under low electrical field. The nonlinear coefficient was about 2.5 and the barrier voltage was very low with the value of about 0.06 V. The dielectric constant of doped samples was higher than that of undoped samples. WO3 ceramic doped with Gd2O3 is a new kind of low voltage capacitor–varistor material.
Keywords
Varistor , Tungsten trioxide , Electrical properties , Microstructure
Journal title
Materials Chemistry and Physics
Serial Year
2004
Journal title
Materials Chemistry and Physics
Record number
1062602
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