• Title of article

    WO3-based capacitor–varistor doped with Gd2O3

  • Author/Authors

    X.S Yang، نويسنده , , Y Wang، نويسنده , , L Dong، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2004
  • Pages
    5
  • From page
    253
  • To page
    257
  • Abstract
    WO3-based varistors doped with Gd2O3 were prepared and the microstructures, the nonlinear electrical properties and the dielectric properties were investigated. There is only monoclinic phase of WO3 existing in the doped samples. The electrical properties were stable, either under high electrical field or under low electrical field. The nonlinear coefficient was about 2.5 and the barrier voltage was very low with the value of about 0.06 V. The dielectric constant of doped samples was higher than that of undoped samples. WO3 ceramic doped with Gd2O3 is a new kind of low voltage capacitor–varistor material.
  • Keywords
    Varistor , Tungsten trioxide , Electrical properties , Microstructure
  • Journal title
    Materials Chemistry and Physics
  • Serial Year
    2004
  • Journal title
    Materials Chemistry and Physics
  • Record number

    1062602