Microwave heating behaviors of Si substrate materials in a single-mode cavity

Microwave heating behaviors of Si substrate materials were investigated in both H and E field. The temperature curves could be divided into three stages in H field but two stages in E field according to the changing heating rate. With the increase of the Si plate thickness, the heating efficiency gradually decreases in both H and E field. The boron doping in Si has also an evident influence on the heating behaviors, and leads to the reduction of the maximal temperature in the heating curve. By contrast, a thin Au layer deposited on the Si plate can significantly promote the heating efficiency in H field. For all samples, although higher microwave power is used for E field heating, the maximal temperature of the same sample heated at the E maximum was lower than that at the H maximum, confirming that the heating of H field is more effective than that of E field for a high electric conductive sample, and reversely E field heating is more superior for a low conductive one.