Author/Authors :
P.M. Nikolic، نويسنده , , K.M. Paraskevopoulos، نويسنده , , E. Pavlidou، نويسنده , , T.T. Zorba، نويسنده , , T. Ivetic، نويسنده , , S.S. Vujatovic، نويسنده , , O.S. Aleksi?، نويسنده , , N. Nikolic، نويسنده , , O. Cvetkovi?، نويسنده , , V. Blagojevic، نويسنده , , M.V. Nikolic، نويسنده ,
Abstract :
Far infrared reflectivity spectra of polycrystalline In1−xGaxSb were measured and numerically analyzed using the classical dispersion formula and also a fitting procedure based on the modified plasmon-phonon interaction model in the temperature range from 10 K to 300 K. Optical parameters were calculated and discussed. A local mode belonging to the GaSb rich end and two-mode behavior were observed at low temperatures.
Keywords :
Semiconductors , Optical properties , Phonons , Fourier transform infrared spectroscopy (FTIR)
