Title of article :
Effect of dysprosia doping on structural and electrical property of stabilized zirconia for intermediate- temperature SOFCs
Author/Authors :
M. Pastor، نويسنده , , S. Maiti، نويسنده , , A. Pandey، نويسنده , , K. Biswas، نويسنده , , I. Manna and B. S. Murty، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2011
Pages :
8
From page :
202
To page :
209
Abstract :
Present work deals with structural, micro-structural and electrical properties of dysprosia stabilized zirconia electrolyte, which have been evaluated by means of X-ray diffraction (XRD) and scanning (SEM), and complex impedance analysis respectively. The amount of dysprosia was varied from 2 to 12 mol% in zirconia. The addition of dysprosia (8-12 mol%) stabilized the cubic zirconia phase, which was analyzed from XRD analysis. SEM micrographs clearly showed the improvement in sinterability with increase in dysprosia concentration up to 6 mol% disprosia. Complex impedance analysis was performed in the temperature range from 250 to 600 °C. The results indicated a gradual decrease in impedance of both bulk and grain boundary and increase in conductivity with dysprosia doping up to 6 mol% and thereafter showing a reverse trend. The activation energies for oxygen ion migration were also found to decrease with increase in dysprosia doping which was in the range of 0.99 − 1.28 eV. The average thermal expansion coefficient increases linearly.
Keywords :
SEM , Chemical synthesis , Electrical properties , Electrical conductivity
Journal title :
Materials Chemistry and Physics
Serial Year :
2011
Journal title :
Materials Chemistry and Physics
Record number :
1062849
Link To Document :
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